MCIMX25 Motorola Semiconductor Products, MCIMX25 Datasheet - Page 19

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MCIMX25

Manufacturer Part Number
MCIMX25
Description
Manufacturer
Motorola Semiconductor Products
Datasheet

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3.4.1.2
Table 14
Note:
1. Simulation circuit for parameters Voh and Vol for I/O cells is below
2. Minimum condition: bcs model, OVDD = 3.6 V, and –40 °C. Typical condition: typical model, OVDD = 3.3 V, and 25 °C.
3. Typical condition: typical model, OVDD = 3.3 V, and 25 °C. Maximum condition: bcs model, OVDD = 3.6 V, and 105 °C.
3.4.1.3
Table 15
Freescale Semiconductor
High-level output voltage
Low-level output voltage
Output min. source current
Output min. sink current
DC input logic high
DC input logic low
High-level output voltage
Low-level output voltage
Low-level DC input voltage
Input current (no pull-up/down)
High-impedance I/O supply current Icc-ovdd
High-impedance core supply
current
High-level output current
Low-level output current
High-level DC input voltage
Maximum condition: wcs model, OVDD = 3.0 V, and 105 °C.
DC Electrical Characteristics
DC Electrical Characteristics
shows the DC I/O parameters for SDRAM.
shows the I/O parameters for DDR2 (SSTL_18).
DDR_TYPE = 01 SDRAM I/O DC Parameters
DDR_TYPE = 10 Max Setting DDR I/O DC Parameters
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 2
Table 15. DDR2 (SSTL_18) I/O DC Electrical Characteristics
Table 14. SDRAM DC Electrical Characteristics
Symbol
VIH(dc)
VIL(dc)
Symbol
Icc-vddi
Voh
IIoh
Voh
VIH
Vol
IIol
Vol
Ioh
VIL
IIN
Iol
I
I
(Ioh = 4, 8, 12, 16mA)
Conditions
Ioh = Specified Drive
Ioh = Specified Drive
(Ioh = –4, –8, –12,
Test Conditions
VI = OVDD or 0
Standard Drive
Standard Drive
VI = VDD or 0
Test
VI = OVDD
Max. Drive
Max. Drive
High Drive
High Drive
–16mA)
VI = 0
OVDD/2 + 0.125
OVDD – 0.28
–0.3 V
–13.4
Min.
13.4
–0.3 V
–12.0
Min.
–4.0
–8.0
12.0
2.4
4.0
8.0
2.0
Typ.
Typ.
OVDD/2 – 0.125
OVDD + 0.3
Max.
0.28
Max.
1180
1220
150
0.4
3.6
0.8
80
Units
Units
mA
mA
mA
mA
nA
nA
nA
V
V
V
V
V
V
V
V
Notes
Notes
2, 3
2, 3
1
1
1
2
19

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