SPB80P06PG Infineon Technologies Corporation, SPB80P06PG Datasheet - Page 8

• Manufacturer Part Number: SPB80P06PG
• Description: P-channel Mosfets Power-transistor
• Manufacturer: Infineon Technologies Corporation

Avalanche energy
E
para.: I
Drain-source breakdown voltage
V
AS
(BR)DSS
mJ
Rev 1.2
850
700
600
500
400
300
200
100
V
-72
-68
-66
-64
-62
-60
-58
-56
-54
= f ( T
0
-60
25
D
SPP80P06P
= -80 A , V
= f ( T
j
45
)
-20
65
j
)
20
85
DD
60
105
= -25 V, R
100
125
145
140
GS
°C
°C
T
T
= 25
j
j
185
200
W
Page 8
Typ. gate charge
V
parameter: I
GS
V
-16
-12
-10
= f ( Q
-8
-6
-4
-2
0
0
SPP80P06P
20
Gate
D
40
= -80 A pulsed
)
0,2
60
V
DS max
80
100 120 140
SPB80P06P G
SPP80P06P
0,8
2008-02-18
V
DS max
nC
Q
Gate
180