SPB80P06PG Infineon Technologies Corporation, SPB80P06PG Datasheet - Page 5

• Manufacturer Part Number: SPB80P06PG
• Description: P-channel Mosfets Power-transistor
• Manufacturer: Infineon Technologies Corporation

Power dissipation
P
Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
Rev 1.2
-10
-10
-10
-10
W
360
280
240
200
160
120
A
= f ( T
80
40
0
3
2
1
0
-10
0
SPP80P06P
SPP80P06P
DS
-1
C
20
)
)
40
60
-10
0
80 100 120 140 160
C
= 25 °C
-10
1
DC
V
T
V
°C
t p = 14.0µs
C
DS
100 µs
1 ms
10 ms
190
-10
Page 5
2
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter : D = t
D
thJC
K/W
= f ( T
10
10
10
10
10
10
10
A
-90
-70
-60
-50
-40
-30
-20
-10
-1
-2
-3
-4
-5
0
= f ( t
1
0
10
0
SPP80P06P
SPP80P06P
C
-7
)
20
p
10
single pulse
)
GS
-6
40
³
10
60
p
10 V
-5
/ T
80 100 120 140 160
10
-4
10
SPP80P06P
SPB80P06P G
-3
10
2008-02-18
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
°C
p
C
190
10
0