SPB80P06PG Infineon Technologies Corporation, SPB80P06PG Datasheet - Page 2

• Manufacturer Part Number: SPB80P06PG
• Description: P-channel Mosfets Power-transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
Rev 1.2
= -5.5 mA
= -60 V, V
= -60 V, V
= 0 V, I
= -20 V, V
= -10 V, I
2
cooling area
D
= -250 µA
D
GS
GS
DS
= -64 A
= 0 V, T
= 0 V, T
= 0 V
1)
GS
j
j
= 25 °C
= 150 °C
= V
j
DS
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJC
thJA
thJA
min.
min.
-2.1
-60
-
-
-
-
-
-
-
-
Values
Values
0.021 0.023
typ.
-0.1
typ.
-10
-10
-3
-
-
-
-
-
SPP80P06P
SPB80P06P G
max.
max.
-100
-100
0.4
62
62
40
-4
-1
2008-02-18
-
Unit
V
µA
nA
W
Unit
K/W