SPB80P06PG Infineon Technologies Corporation, SPB80P06PG Datasheet - Page 7

• Manufacturer Part Number: SPB80P06PG
• Description: P-channel Mosfets Power-transistor
• Manufacturer: Infineon Technologies Corporation

Drain-source on-state resistance
R
parameter : I
Typ. capacitances
C = f ( V
parameter: V
DS(on)
Rev 1.2
0.070
0.060
0.055
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
pF
W
10
10
10
10
-60
5
4
3
2
0
SPP80P06P
DS
= f ( T
)
-20
D
-5
GS
j
)
= -64 A, V
=0V, f =1 MHz
20
98%
-10
typ
60
GS
-15
100
= -10 V
140 °C
V
C
C
C
T
iss
oss
rss
V
j
DS
200
-25
Page 7
Gate threshold voltage
V
parameter: V
Forward characteristics of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-5.0
-5.0
-5.0
-5.0
-4.0
-4.0
-4.0
-4.0
-3.5
-3.5
-3.5
-3.5
-3.0
-3.0
-3.0
-3.0
-2.5
-2.5
-2.5
-2.5
-2.0
-2.0
-2.0
-2.0
-1.5
-1.5
-1.5
-1.5
-1.0
-1.0
-1.0
-1.0
-0.5
-0.5
-0.5
-0.5
10
10
10
10
V
V
V
V
A
0.0
0.0
0.0
0.0
-60
-60
-60
-60
0.0
3
2
1
0
SPP80P06P
= f ( T j )
SD
-0.4
)
-20
-20
-20
-20
GS
-0.8
p
= V
20
20
20
20
= 80 µs
-1.2
DS
98%
T
T
T
T
typ
2%
j
j
j
j
60
60
60
60
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
, I
-1.6
D
= -5.5 mA
SPP80P06P
100
100
100
100
SPB80P06P G
-2.0
2008-02-18
140
140
140
140
-2.4
°C
°C
°C
°C
V
V
T
T
T
T
SD
j
j
j
j
-3.0
200
200
200
200