STP10NM60ND STMicroelectronics, STP10NM60ND Datasheet - Page 8

• Manufacturer Part Number: STP10NM60ND
• Description: N-channel 600 V, 0.57 8 A, Dpak, To-220, To-220fp , Fdmeshtm Ii Power Mosfet
• Manufacturer: STMicroelectronics

Electrical characteristics
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Figure 14.
Figure 16. Source-drain diode forward
V
GS(th)
(norm)
1.00
0.80
1.10
0.70
0.90
(V)
V
0.6
0.4
0.2
0.8
0
1.0
1.2
SD
-50
0
vs temperature
characteristics
Normalized gate threshold voltage
-25
T
J
=-50°C
T
2
J
0
=150°C
25
4
I
D
50
=250µA
75
6
100
T
8
J
=25°C
T
I
J
SD
(°C)
Doc ID 18467 Rev 1
AM08982v1
AM08985v1
(A)
Figure 15. Normalized on resistance vs
Figure 17. Normalized BV
STD10NM60ND, STF10NM60ND, STP10NM60ND
R
BV
(norm)
0.95
DS(on)
1.07
1.05
0.93
1.03
0.99
0.97
1.01
(norm)
DSS
0.7
1.7
1.5
1.3
1.1
0.9
2.1
0.5
1.9
-50
-50
temperature
-25
-25
0
0
I
D
25
25
=1mA
50
50
DSS
75
75
vs temperature
100
100
T
T
J
J
(°C)
(°C)
AM08983v1
AM08984v1