STP10NM60ND STMicroelectronics, STP10NM60ND Datasheet - Page 4

• Manufacturer Part Number: STP10NM60ND
• Description: N-channel 600 V, 0.57 8 A, Dpak, To-220, To-220fp , Fdmeshtm Ii Power Mosfet
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/19
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5.
Table 6.
1. C
C
V
Symbol
Symbol
R
V
oss eq
(BR)DSS
when V
C
I
I
C
DS(on)
C
GS(th)
Q
Q
DSS
GSS
Q
R
oss eq.
oss
rss
iss
gs
gd
g
g
(1)
DS
time related is defined as a constant equivalent capacitance giving the same charging time as C
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
increases from 0 to 80% V
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 18467 Rev 1
DSS
V
V
V
f=1 MHz open drain
V
V
(see Figure 19)
I
V
V
V
V
D
DS
GS
DS
DD
GS
GS
GS
DS
DS
DS
= 1 mA, V
= max rating
= max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 480 V, V
= 10 V
= ± 25 V; V
= V
= 10 V, I
= 480 V, I
STD10NM60ND, STF10NM60ND, STP10NM60ND
Test conditions
Test conditions
GS
, I
GS
D
D
D
= 250 µA
= 4 A
= 0
DS
= 8 A,
=0
GS
C
=125 °C
= 0
Min.
Min.
600
3
-
-
-
-
Typ.
Typ.
32.4
1.76
11.6
0.57
577
138
4.3
20
6
4
Max.
Max.
100
100
0.6
1
5
-
-
-
-
oss
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
Ω