STP10NM60ND STMicroelectronics, STP10NM60ND Datasheet - Page 5

• Manufacturer Part Number: STP10NM60ND
• Description: N-channel 600 V, 0.57 8 A, Dpak, To-220, To-220fp , Fdmeshtm Ii Power Mosfet
• Manufacturer: STMicroelectronics

STD10NM60ND, STF10NM60ND, STP10NM60ND
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
SD
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 18467 Rev 1
V
R
(see Figure 18)
I
I
V
(see Figure 20)
I
V
(see Figure 20)
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 8 A, V
= 8 A, di/dt = 100 A/µs
= 8 A, di/dt = 100 A/µs
= 300 V, I
= 60 V
= 60 V T
Test conditions
Test conditions
GS
J
GS
D
= 150 °C
= 0
= 4 A,
= 10 V
Electrical characteristics
Min.
Min. Typ. Max Unit
-
-
-
-
-
Typ.
9.2
9.8
10
32
118
680
150
918
11
12
Max Unit
1.5
32
8
-
µC
µC
ns
ns
ns
ns
ns
ns
5/19
A
A
V
A
A