BST72A Philips Semiconductors (Acquired by NXP), BST72A Datasheet - Page 7

• Manufacturer Part Number: BST72A
• Description: BST72A-03; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT54 (SPT, E-1)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
9397 750 07296
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C and 150 C; V
= 1 mA; V
V GS(th)
junction temperature.
drain current; typical values.
g fs
(S)
(V)
0.45
0.35
0.25
0.15
0.05
0.5
0.4
0.3
0.2
0.1
2.5
1.5
0.5
0
3
2
1
0
0
-60
DS
V DS > I D X R DSon
= V
0.1
-20
GS
0.2
DS
20
min
typ
0.3
I
D
60
0.4
R
DSon
100
0.5
T j = 25 o C
03aa66
T j ( o C)
I D (A)
140
0.6
150 o C
03aa34
0.7
180
Rev. 03 — 25 July 2000
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
C iss , C oss ,
gate-source voltage.
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
C rss (pF)
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
(A)
I
D
10 2
10
0
1
10 -1
DS
= 5 V
0.5
1
min
1
1.5
© Philips Electronics N.V. 2000. All rights reserved.
2
10
typ
V GS (V)
2.5
V DS (V)
BST72A
03aa37
03aa68
C oss
C rss
C iss
3
10 2
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