BST72A Philips Semiconductors (Acquired by NXP), BST72A Datasheet - Page 6

• Manufacturer Part Number: BST72A
• Description: BST72A-03; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT54 (SPT, E-1)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
9397 750 07296
Product specification
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
T
T
j
j
= 25 C
= 25 C
R DSon
function of drain-source voltage; typical values.
of drain current; typical values.
( )
(A)
I D
0.45
0.35
0.25
0.15
0.05
0.5
0.4
0.3
0.2
0.1
0
12
11
10
9
8
7
6
5
4
3
2
1
0
0
0
0.2 0.4 0.6 0.8
T j = 25 o C
3 V
0.1
3.5V
0.2
1
4 V
1.2 1.4 1.6 1.8
0.3
V GS = 10V
I D (A)
V GS = 10V
0.4
03aa63
V DS (V)
T j = 25 o C
3.5 V
03aa64
4 V
3 V
5 V
5 V
2
0.5
Rev. 03 — 25 July 2000
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
j
=
= 25 C and 150 C; V
function of gate-source voltage; typical values.
factor as a function of junction temperature.
--------------------------- -
R
a
(A)
I D
DSon 25 C
R
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
0.7
0.6
0.5
0.4
0.3
0.2
0.1
DSon
3
2
1
0
0
-60
0
V DS > I D X R DSon
-20
1
2
T j = 25 o C
20
DS
3
60
I
D
4
© Philips Electronics N.V. 2000. All rights reserved.
R
100
DSon
5
150 o C
6
140
BST72A
T j (
V GS (V)
03aa65
o
03aa29
7
C)
180
8
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