BST72A Philips Semiconductors (Acquired by NXP), BST72A Datasheet - Page 5

• Manufacturer Part Number: BST72A
• Description: BST72A-03; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT54 (SPT, E-1)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 07296
Product specification
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
C
C
C
t
t
Source-drain diode
V
t
Q
DSS
GSS
on
off
rr
j
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
forward transconductance
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
Conditions
I
Figure 9
V
V
V
Figure 7
V
Figure 11
V
f = 1 MHz;
V
V
R
I
Figure 13
I
dI
V
D
D
S
S
DS
GS
GS
DS
GS
DD
GS
GS
GS
S
T
T
T
T
T
T
T
T
T
= 10 A; V
= 1 mA; V
= 300 mA; V
= 300 mA;
/dt = 100 A/ s;
j
j
j
j
j
j
j
j
j
= 60 V; V
= 5 V; I
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 20 V; V
= 5 V; I
= 25 C
= 150 C
= 0 V; V
= 50 V; R
= 10 V; R
= 0 V; V
= 50
Rev. 03 — 25 July 2000
and
Figure 12
D
D
DS
DS
DS
GS
8
= 175 mA;
= 150 mA;
GS
D
G
GS
DS
= V
= 10 V;
= 25 V
= 250 ;
= 50 ;
= 0 V
= 0 V
= 0 V
= 0 V;
N-channel enhancement mode field-effect transistor
GS
;
Min
100
89
1
0.6
Typ
130
2
0.01
10
5
350
25
8.5
5
3
12
0.95
30
30
© Philips Electronics N.V. 2000. All rights reserved.
Max
3.5
1.0
10
100
10
23
40
15
10
10
15
1.5
BST72A
Unit
V
V
V
V
V
nA
mS
pF
pF
pF
ns
ns
V
ns
nC
5 of 13
A
A