BST72A Philips Semiconductors (Acquired by NXP), BST72A Datasheet - Page 2

• Manufacturer Part Number: BST72A
• Description: BST72A-03; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT54 (SPT, E-1)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 07296
Product specification
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
D
DM
S
SM
j
stg
j
DS
tot
DS
DGR
GS
tot
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC)
peak source (diode forward) current
Quick reference data
Limiting values
Conditions
T
T
T
V
Conditions
T
T
T
Figure 2
T
T
Figure 3
T
T
T
Rev. 03 — 25 July 2000
j
amb
amb
j
j
amb
amb
amb
amb
amb
amb
GS
= 25 to 150 C
= 25 to 150 C
= 25 to 150 C; R
= 5 V; I
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
and
D
N-channel enhancement mode field-effect transistor
3
= 150 mA
Figure 1
GS
GS
GS
= 5 V
= 5 V;
GS
= 5 V;
p
p
= 20 k
10 s;
10 s
Figure 2
Typ
5
Min
65
65
© Philips Electronics N.V. 2000. All rights reserved.
Max
100
190
0.83
150
10
Max
100
100
190
120
0.8
0.83
+150
+150
190
0.8
BST72A
20
Unit
V
mA
W
Unit
V
V
V
mA
mA
A
W
mA
A
C
C
C
2 of 13