TC2696 Transcom, TC2696 Datasheet - Page 2

• Manufacturer Part Number: TC2696
• Description: 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
• Manufacturer: Transcom

TC2696
ABSOLUTE MAXIMUM RATINGS (T
TYPICAL SCATTERING PARAMETERS (T
V
OUTLINE DIMENSIONS (in mm)
TRANSCOM, INC., 90 Dasoong 7
Web-Site: www.transcominc.com.tw
DS
Symbol
= 8 V, I
T
V
T
V
I
P
P
STG
DS
CH
GS
in
DS
T
FREQUENCY
DS
= 600 mA
(GHz)
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
2
3
4
5
6
7
8
9
Source
Parameter
0.9232
0.9179
0.9098
0.8978
0.8806
0.8574
0.8295
0.8045
MAG
th
Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
S11
- 65
175.28
161.34
148.40
134.59
118.62
ANG
99.05
74.18
42.52
Drain
26 dBm
C
Rating
175
12 V
6 W
-5 V
I
to +175
A
DSS
Phone: [phone]
=25 C)
C
1.8019
1.2279
0.9600
0.8236
0.7599
0.7426
0.7529
0.7648
MAG
C
A
=25 C)
S21
134
-19.79
-41.79
-67.22
-97.22
RECOMMANDED OPERATING CONDITION
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly,
and testing. The static discharge must be less than
300V.
58.43
38.12
19.07
ANG
0.11
Symbol
V
Source
I
D
DS
0.0288
0.0303
0.0327
0.0364
0.0420
0.0496
0.0595
0.0701
MAG
Drain to Source Voltage
Drain Current
S12
Fax: [phone]
-102.04
-127.59
Parameter
-14.46
-26.85
-38.61
-50.96
-64.88
-81.49
ANG
0.6268
0.6531
0.6737
0.6847
0.6839
0.6699
0.6430
0.6085
MAG
S22
174.83
167.56
158.81
148.28
135.52
119.60
600 mA
Rating
98.92
71.06
ANG
8 V