TC2896 TRANSCOM, TC2896 Datasheet

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TC2896

Manufacturer Part Number
TC2896
Description
5 W Flange Ceramic Packaged GaAs Power FETs
Manufacturer
TRANSCOM
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC2896
Manufacturer:
Peregrine
Quantity:
5 000
www.DataSheet4U.com
FEATURES
DESCRIPTION
ELECTRICAL SPECIFICATIONS
* P
** For the tight control of the pinch-off voltage range, we divide TC2896 into 3 model numbers to fit customer design requirement
TRANSCOM, INC., 90 Dasoong 7
Web-Site: www.transcominc.com.tw
Symbol
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details
BV
The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.
The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC
and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for
commercial and military high performance power applications.
(1)TC2896P1519 : Vp = -1.5V to -1.9V (2)TC2896P1620 : Vp = -1.6V to -2.0V (3)TC2896P1721 : Vp = -1.7V to -2.1V
SCL
P
PAE
I
5 W Typical Power at 6 GHz
8 dB Typical Linear Power Gain at 6 GHz
High Linearity: IP3 = 47 dBm Typical at 6 Ghz
High Power Added Efficiency:
Suitable for High Reliability Application
Lg = 0.6 m, Wg = 12 mm
Tight Vp ranges control
High RF input power handling capability
100 % DC and RF Tested
Flange Ceramic Package
IP3
R
G
V
DSS
g
1dB
m
DGO
th
L
P
: Output Power of Single Carrier Level.
Nominal PAE of 40 % at 6 GHz
Output Power at 1dB Gain Compression Point, f = 6 GHz V
Linear Power Gain, f = 6 GHz V
Intercept Point of the 3
Power Added Efficiency at 1dB Compression Power, f = 6 GHz
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
5 W Flange Ceramic Packaged GaAs Power FETs
DS
rd
DS
-order Intermodulation, f = 6 GHz V
= 2 V, I
= 2 V, V
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan,
D
DS
GS
= 24 mA
DGO
= 8 V, I
= 0 V
DS
= 2 V, V
=6 mA
DS
CONDITIONS
Phone: 886-6-5050086
= 1200 mA
GS
= 0 V
P 1 / 4
DS
DS
= 8 V, I
= 8 V, I
DS
DS
= 1200 mA
= 1200 mA, *P
PHOTO ENLARGEMENT
Fax: 886-6-5051602
SCL
= 23 dBm
MIN
36
18
-1.7**
REV4_20070507
TYP
2000
36.5
TC2896
2.7
47
40
22
8
3
MAX UNIT
Volts
Volts
dBm
dBm
C/W
mS
dB
%
A
.

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TC2896 Summary of contents

Page 1

... P : Output Power of Single Carrier Level. SCL ** For the tight control of the pinch-off voltage range, we divide TC2896 into 3 model numbers to fit customer design requirement (1)TC2896P1519 : Vp = -1.5V to -1.9V (2)TC2896P1620 : Vp = -1.6V to -2.0V (3)TC2896P1721 : Vp = -1.7V to -2.1V www.DataSheet4U.com If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details TRANSCOM, INC ...

Page 2

... 1200 mA S12 S22 MAG ANG MAG 0.0139 -12.97 0.8234 0.0142 -21.11 0.8368 0.0149 -28.69 0.8493 0.0159 -36.22 0.8590 0.0173 -44.15 0.8648 0.0195 -52.92 0.8664 0.0224 -63.02 0.8636 0.0263 -75.03 0.8562 Fax: 886-6-5051602 TC2896 REV4_20070507 Rating 8 V 1200 mA ANG 170.89 165.05 158.49 151.12 142.84 133.42 122.53 109.67 ...

Page 3

... TRANSCOM, INC., 90 Dasoong 7 Web-Site: www.transcominc.com. Description 12 ohm 0603 0.75 pF 0603 1.5 pF 0603 0.5 pF 0603 50 pF 0603 10 uF 1812 100 pF 0603 1000 pF 0603 0.1 uF 0603 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, Phone: 886-6-5050086 1200 mA) Fax: 886-6-5051602 TC2896 REV4_20070507 ...

Page 4

... Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, Phone: 886-6-5050086 Lpkg2 Rd Ld Lpkg1 Cpkg1 Rds Crf Rds = 6.49 Ohm Rd = 0.193 Ohm Ld = 0.0032 nH Lpkg1 = 0.1725 nH Lpkg2 = 0.208 nH Lpkg3 = 0.079 nH Lpkg4 = 0.00062 nH Cpkg1 = 0.408 pF Cpkg2 = 0.263 pF Fax: 886-6-5051602 TC2896 REV4_20070507 Lpkg3 D Cpkg2 ...

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