TC2696 Transcom, TC2696 Datasheet
TC2696
Manufacturer Part Number
TC2696
Description
2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
Manufacturer
Transcom
Datasheet
1.TC2696.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC2696
Manufacturer:
RFMD
Quantity:
5 000
Preliminary
FEATURES
DESCRIPTION
ELECTRICAL SPECIFICATIONS (T
Note: * P
TRANSCOM, INC., 90 Dasoong 7
Web-Site: www.transcominc.com.tw
Symbol
BV
PAE
P
I
2 W Typical Output Power at 2.45 GHz
14 dB Typical Linear Power Gain at 2.45 GHz
High Linearity:
IP3 = 43 dBm Typical at 2.45 GHz
High Power Added Efficiency:
Nominal PAE of 43 % at 2.45 GHz
Suitable for High Reliability Application
Breakdown Voltage:
BV
Lg = 0.6 m, Wg = 5 mm
100 % DC Tested
Flange Ceramic Package
IP3
R
G
V
g
DSS
1dB
The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT)
chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices
are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range
power amplifier for commercial applications including Cellular/PCS systems, and military high
performance power amplifier.
m
DGO
th
L
P
DGO
SCL
Output Power at 1dB Gain Compression Point , f = 2.45GHz
V
Linear Power Gain, f = 2.45GHz
V
Intercept Point of the 3
V
Power Added Efficiency at 1dB Compression Power, f = 2.45GHz
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
: Output Power of Single Carrier Level.
DS
DS
DS
18 V
= 8 V, I
= 8 V, I
= 8 V, I
TRANSCOM
2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
DS
DS
DS
= 600 mA
= 600 mA
= 600 mA, *P
DS
DS
rd
-order Intermodulation, f = 2.45GHz
= 2 V, I
= 2 V, V
th
Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
SCL
CONDITIONS
= 20 dBm
D
GS
= 10 mA
DGO
= 0 V
DS
= 2 V, V
=2.5 mA
A
=25 C)
Phone: 886-6-5050086
GS
= 0 V
133
PHOTO ENLARGEMENT
MIN
32.5
12
15
Fax: 886-6-5051602
TYP
-1.7
850
1.2
33
14
43
43
18
7
TC2696
January 2002
MAX
UNIT
dBm
dBm
Volts
Volts
C/W
mS
dB
%
A
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TC2696 Summary of contents
Page 1
... Flange Ceramic Package DESCRIPTION The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications including Cellular/PCS systems, and military high performance power amplifier ...
Page 2
... TC2696 ABSOLUTE MAXIMUM RATINGS (T Symbol Parameter V Drain-Source Voltage DS V Gate-Source Voltage GS I Drain Current Input Power Continuous Dissipation T T Channel Temperature CH T Storage Temperature STG TYPICAL SCATTERING PARAMETERS ( 600 FREQUENCY (GHz) MAG 2 0.9232 3 0.9179 4 0.9098 5 0.8978 6 0 ...