TC2996B Transcom, TC2996B Datasheet

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TC2996B

Manufacturer Part Number
TC2996B
Description
GaAs Power FETs
Manufacturer
Transcom
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
TC2996B
Manufacturer:
Transcom
Quantity:
5 000
FEATURES
DESCRIPTION
ELECTRICAL SPECIFICATIONS (@ 1.9 GHz)
* P
TRANSCOM, INC., 90 Dasoong 7
Web-Site: www.transcominc.com.tw
SYMBOL
The TC2996B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power
transistor with input prematched circuits. The flange ceramic package provides the best thermal
conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range power amplifiers for commercial applications.
SCL
BV
12 W Typical Power at 1.9 GHz
13 dB Typical Linear Power Gain at 1.9 GHz
High Linearity: IP3 = 50 dBm Typical
High Power Added Efficiency: Nominal PAE of 40 %
Suitable for High Reliability Application
Lg = 1 m, Wg = 30 mm
100 % DC and RF Tested
Flange Ceramic Package
PAE
P
I
IP3
R
G
V
g
DSS
1dB
: Output Power of Single Carrier Level.
m
DGO
th
L
P
Output Power at 1dB Gain Compression Point V
Linear Power Gain V
Intercept Point of the 3
Power Added Efficiency at 1dB Compression Power
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
1.9 GHz 12 W Flange Ceramic Packaged GaAs Power FETs
DS
DS
rd
DS
= 10 V, I
-order Intermodulation, V
= 2 V, I
= 2 V, V
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
D
DS
GS
= 60 mA
= 2.5A
DGO
CONDITIONS
DS
= 0 V
= 2 V, V
=15 mA
Phone: 886-6-5050086
GS
DS
DS
= 0 V
= 10 V, I
= 10 V, I
P 1 / 3
DS
DS
= 2.5A
= 2.5A, *P
SCL
= 28 dBm
PHOTO ENLARGEMENT
Fax: 886-6-5051602
MIN
39.5
12
20
TYP
5400
41.0
-1.7
7.5
1.5
13
50
40
22
MAX
TC2996B
REV1_20070503
UNIT
Volts
Volts
dBm
dBm
C/W
mS
dB
%
A

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TC2996B Summary of contents

Page 1

... Flange Ceramic Package DESCRIPTION The TC2996B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. ...

Page 2

... Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 Source ( 2 S12 S22 MAG ANG MAG -28.741 0.71594 -127.32 0.98480 -156.24 0.94714 -144.13 0.96184 -137.94 0.97169 -136.73 0.97762 Fax: 886-6-5051602 TC2996B REV1_20070503 ANG -163.61 -172.81 179.61 175.04 170.70 166.59 ...

Page 3

... Murata 1.0 pF 0603 Murata 1.5 pF 0603 Murata 1000 pF 0603 Murata 0.1 uF 0603 Murata 10 uF 1206 Murata Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 TC2996B REV1_20070503 Co6 +10 V +10 V Co5 Co4 Co3 Co2 Co1 Fax: 886-6-5051602 ...

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