APT50GT120LRDQ2 Microsemi Corporation, APT50GT120LRDQ2 Datasheet - Page 9

• Manufacturer Part Number: APT50GT120LRDQ2
• Description: Insulated Gate Bipolar Transistor - Npt Standard Speed
• Manufacturer: Microsemi Corporation

TYPICAL PERFORMANCE CURVES
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
1
4
5
2
3
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
F
RRM
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
current goes from positive to negative, to the point at which the straight
line through I
- Maximum Reverse Recovery Current.
+18V
0V
RRM
and 0.25 I
RRM
passes through zero.
Figure 33, Diode Reverse Recovery Waveform and Definitions
RRM
and t rr .
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Dimensions in Millimeters and (Inches)
TO-264 Package Outline
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
di
F
/dt Adjust
e1 SAC: Tin, Silver, Copper
Figure 32. Diode Test Circuit
5.79 (.228)
6.20 (.244)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
5.45 (.215) BSC
2.79 (.110)
3.18 (.125)
2-Plcs.
30µH
Zero
19.51 (.768)
20.50 (.807)
V r
APT10078BLL
1
TRANSFORMER
PEARSON 2878
CURRENT
Gate
Collector
(Cathode)
Emitter
(Anode)
2
3.10 (.122)
3.48 (.137)
2.29 (.090)
2.69 (.106)
D.U.T.
3
APT50GT120LRDQ2(G)
4
5
t rr / Q rr
Waveform
0.25 I RRM