APT50GT120LRDQ2 Microsemi Corporation, APT50GT120LRDQ2 Datasheet - Page 7

• Manufacturer Part Number: APT50GT120LRDQ2
• Description: Insulated Gate Bipolar Transistor - Npt Standard Speed
• Manufacturer: Microsemi Corporation

TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Symbol
I
Symbol
Symbol
F
I
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
F
(RMS)
I
I
I
I
RRM
RRM
RRM
FSM
(AV)
Q
Q
Q
V
t
t
t
t
rr
rr
rr
rr
F
rr
rr
rr
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
Characteristic / Test Conditions
Maximum Average Forward Current (T
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Characteristic / Test Conditions
Forward Voltage
10
-5
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.9
0.7
0.5
0.3
0.1
0.05
10
-4
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
I
F
= 1A, di
Case temperature (°C)
RECTANGULAR PULSE DURATION (seconds)
SINGLE PULSE
F
Junction
temp (°C)
/dt = -100A/µs, V
C
(watts)
Power
10
= 112°C, Duty Cycle = 0.5)
J
-3
= 45°C, 8.3ms)
I
I
I
I
F
F
F
I
I
F
F
F
= 50A
= 100A
= 50A, T
V
V
= 40A, di
V
= 40A, di
= 40A, di
R
R
R
= 800V, T
= 800V, T
Test Conditions
= 800V, T
RC MODEL
0.0442
0.242
0.324
R
J
= 125°C
= 30V, T
F
F
F
/dt = -1000A/µs
All Ratings: T
/dt = -200A/µs
/dt = -200A/µs
10
C
C
C
-2
= 125°C
= 125°C
= 25°C
J
0.00222
0.00586
0.0596
= 25°C
C
= 25°C unless otherwise specified.
Note:
Peak T J = P DM x Z θJC + T C
APT50GT120LRDQ2(G)
MIN
MIN
-
-
-
-
-
-
-
-
-
-
Duty Factor D =
10
-1
t 1
APT50GT120LRDQ2(G)
2200
3400
t 2
2.98
3.67
2.36
TYP
TYP
350
570
430
210
210
26
29
40
63
4
9
t 1
/
t 2
MAX
MAX
1.0
-
-
Amps
Amps
UNIT
Amps
Amps
UNIT
Volts
UNIT
nC
nC
nC
ns
ns
ns