APT50GT120LRDQ2 Microsemi Corporation, APT50GT120LRDQ2 Datasheet - Page 3

• Manufacturer Part Number: APT50GT120LRDQ2
• Description: Insulated Gate Bipolar Transistor - Npt Standard Speed
• Manufacturer: Microsemi Corporation

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
120
100
140
120
100
80
60
40
20
80
60
40
20
0
0
6
5
4
3
2
1
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
GE
V
<0.5 % DUTY CYCLE
TEST<0.5 % DUTY
250µs PULSE TEST
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
T
= 15V
J
1
2
, GATE-TO-EMITTER VOLTAGE (V)
T
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
J
T
T
= 25°C.
J
J
= 125°C
= 25°C
T
10
0
J
2
4
= 125°C
T
25
J
T
= 25°C
J
3
6
= -55°C
12
50
I
I
C
I
C
4
8
C
= 50A
= 25A
75
= 100A
10
5
100 125 150
14
J
12
6
= 25°C)
16
14
7
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
150
125
100
160
140
120
100
75
50
25
16
14
12
10
80
60
40
20
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
7
6
5
4
3
2
1
0
0
-50
V
25
0
0
CE
T
I
<0.5 % DUTY CYCLE
C
250µs PULSE TEST
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 50A
-25
50
I
V
C
T
GE
T
= 100A
50
C
J
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
5
0
100
GATE CHARGE (nC)
I
C
25
15V
= 50A
75
150
V
V
13V
CE
CE
10
50
= 240V
= 600V
200
I
12V
C
100
= 25A
75 100 125 150
11V
250
15
10V
V
125
CE
300
J
9V
= 960V
= 125°C)
8V
7V
350
150
20