APT50GT120LRDQ2 Microsemi Corporation, APT50GT120LRDQ2 Datasheet - Page 4

• Manufacturer Part Number: APT50GT120LRDQ2
• Description: Insulated Gate Bipolar Transistor - Npt Standard Speed
• Manufacturer: Microsemi Corporation

FIGURE 15, Switching Energy Losses vs. Gate Resistance
25,000
20,000
15,000
10,000
60,000
50,000
40,000
30,000
20,000
10,000
5,000
FIGURE 13, Turn-On Energy Loss vs Collector Current
160
140
120
100
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
35
30
25
20
15
10
80
60
40
20
5
0
0
0
0
I
I
CE
CE
10
10
10
I
0
CE
V
V
R
V
T
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
GE
G
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
= 25°C
= 1Ω
= 1Ω
= 800V
= +15V
= 800V
R
G
30
20
30
10
, GATE RESISTANCE (OHMS)
,
or 125°C
V
GE
30
20
50
50
= 15V
40
30
70
70
90
50
40
90
110
110
60
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
25,000
20,000
15,000
10,000
FIGURE 14, Turn Off Energy Loss vs Collector Current
5,000
6000
5000
4000
3000
2000
1000
FIGURE 10, Turn-Off Delay Time vs Collector Current
300
250
200
150
100
FIGURE 12, Current Fall Time vs Collector Current
50
60
50
40
30
20
10
0
0
0
0
I
I
10
CE
10
CE
10
I
0
CE
V
V
R
V
V
R
V
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
GE
G
CE
GE
G
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
V
= 1Ω
= 1Ω
GE
=
= 800V
T
= 800V
= +15V
= +15V
=
J
1Ω
, JUNCTION TEMPERATURE (°C)
800V
=15V,T
30
30
30
25
J
=125°C
R
50
50
G
50
50
=
V
GE
1Ω, L
=15V,T
=
70
70
70
75
100
J
=25°C
µ
H, V
100
90
90
90
CE
=
800V
110
110
110
125