MBM29DL640E Fujitsu Microelectronics, Inc., MBM29DL640E Datasheet - Page 47

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MBM29DL640E

Manufacturer Part Number
MBM29DL640E
Description
Flash Memory 64 M 8 M X 8/4 M X 16 Bit Dual Operation
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet

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Notes : 1. PA is address of the memory location to be programmed.
CE
OE
WE
Address
Data
2. PD is data to be programmed at word address.
3. DQ
4. D
5. Figure indicates last two bus cycles out of four bus cycle sequence.
6. These waveforms are for the
Figure 6 Alternate WE Controlled Program Operation Timing Diagram
OUT
7
t
is the output of the complement of the data written to the device.
GHWL
is the output of the data written to the device.
3rd Bus Cycle
t
555h
CS
t
WC
t
t
A0h
DS
WP
t
DH
t
WPH
t
AS
t
CH
PA
t
PD
AH
16 mode. (The addresses differ from
t
Data Polling
WHWH1
DQ
PA
7
D
MBM29DL640E
OUT
t
DF
t
t
CE
RC
8 mode.)
t
D
OE
OUT
t
OH
80/90/12
47

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