BUW85 NXP Semiconductors, BUW85 Datasheet - Page 7

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BUW85

Manufacturer Part Number
BUW85
Description
Silicon Diffused Power Transistors
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
1997 Aug 14
handbook, full pagewidth
handbook, full pagewidth
Silicon diffused power transistors
V CEsat
(1) I
Z th j mb
(V)
(K/W)
C
10
10
4
3
2
1
0
= 0.3 A.
10
0
1
1
2
10
(1)
2
0.75
0.50
0.33
0.20
0.10
= 1
Fig.7 Collector-emitter saturation voltage as a function of base current; typical values.
0.05
0.02
0.01
0
(2) I
(2)
C
= 0.5 A.
0.05
10
(3)
1
(3) I
C
= 0.7 A.
Fig.6 Transient thermal impedance.
0.1
1
(4)
(4) I
C
= 1 A.
0.15
6
10
T
j
= 25 C; solid line: typical values; dotted line: maximum values.
0.2
10
2
BUW84; BUW85
0.25
P
10
3
t p
Product specification
I B (A)
T
t p (ms)
MGB908
=
MGB865
t p
T
t
0.3
10
4

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