BUW85 NXP Semiconductors, BUW85 Datasheet - Page 2

• Manufacturer Part Number: BUW85
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT82 package.
APPLICATIONS
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
1997 Aug 14
SYMBOL
V
V
V
I
I
P
t
R
R
C
CM
f
SYMBOL
Converters
Inverters
Switching regulators
Motor control systems
Switching applications.
CESM
CEO
CEsat
tot
th j-a
Silicon diffused power transistors
th j-mb
collector-emitter peak voltage
collector-emitter voltage
collector-emitter saturation voltage
collector current (DC)
collector current (peak value)
total power dissipation
fall time
thermal resistance from junction to mounting base
thermal resistance from junction to ambient in free air
BUW84
BUW85
BUW84
BUW85
PARAMETER
ok, halfpage
PINNING
PARAMETER
PIN
1
2
3
V
open base
I
see Figs 4 and 5
see Figs 4 and 5
T
resistive load; see Fig.11
C
mb
BE
= 1 A; I
base
collector; connected to mounting base
emitter
= 0
25 C; see Fig.8
Fig.1 Simplified outline (SOT82) and symbol.
1
1
CONDITIONS
B
= 200 mA; see Fig.7
2
3
MBK107
DESCRIPTION
0.4
TYP.
VALUE
BUW84; BUW85
100
2.1
MBB008
Product specification
1
800
1000
400
450
1
2
3
50
MAX.
3
2
UNIT
K/W
K/W
V
V
V
V
V
A
A
W
s
UNIT