BUW85 NXP Semiconductors, BUW85 Datasheet - Page 3

• Manufacturer Part Number: BUW85
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
1997 Aug 14
V
V
V
I
I
I
I
I
P
T
T
V
V
V
I
I
h
f
SYMBOL
C
CM
B
BM
BM
j
CES
EBO
T
SYMBOL
FE
stg
j
CESM
CEO
EBO
tot
= 25 C unless otherwise specified.
CEOsust
CEsat
BEsat
Silicon diffused power transistors
collector-emitter sustaining voltage
collector-emitter saturation voltage
base-emitter saturation voltage
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
transition frequency
collector-emitter peak voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
base current (reversed; peak value) turn-off current
total power dissipation
storage temperature
junction temperature
BUW84
BUW85
BUW84
BUW85
BUW84
BUW85
PARAMETER
PARAMETER
V
open base
open collector
see Figs 4 and 5
t
T
I
L = 25 mH; see Figs 2 and 3
I
see Fig.7
I
see Fig.7
I
V
note 1
V
T
V
V
V
see Fig.10
V
f = 1 MHz
p
C
C
C
C
mb
j
BE
CEM
CEM
EB
CE
CE
CE
= 2 ms; see Figs 4 and 5
= 125 C; note 1
= 100 mA; I
= 0.3 A; I
= 1 A; I
= 1 A; I
= 0
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
= V
= V
25 C; see Fig.8
2
CONDITIONS
CONDITIONS
CEMSmax
CEMSmax
B
B
= 200 mA;
= 200 mA
B
C
C
C
C
= 30 mA;
= 0
= 5 A; see Fig.10 15
= 100 mA;
Boff
= 200 mA;
; V
; V
= 0;
BE
BE
= 0;
= 0;
400
450
20
65
MIN.
MIN.
BUW84; BUW85
50
20
TYP.
800
1000
400
450
5
2
3
0.75
1
50
+150
150
1
Product specification
MAX.
0.8
1
1.1
200
1.5
1
100
MAX.
V
V
V
V
V
A
A
A
A
A
W
C
C
UNIT
V
V
V
V
V
mA
mA
MHz
UNIT
A