BUW14 NXP Semiconductors, BUW14 Datasheet - Page 3

• Manufacturer Part Number: BUW14
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
March 1992
Silicon Diffused Power Transistor
Fig.4. Switching times waveforms with resistive load.
R
VIM
0
Fig.3. Test circuit resistive load. V
B
IB
IC
and R
120
110
100
90
80
70
60
50
40
30
20
10
V
0
CC
T
Fig.5. Normalised power dissipation.
0
PD%
tp
L
= 150 V; tp = 20 s; = tp / T = 0.01.
calculated from I
PD% = 100 P
20
10 %
tr
ton
30ns
40
90 %
R
B
-IBoff
60
D
Tmb / C
/P
Con
D 25˚C
80
Normalised Power Derating
and I
= f (T
100
ts
toff
Bon
R
VCC
IM
T.U.T.
L
mb
requirements.
IBon
= -6 to +8 V
120
)
ICon
tf
140
90 %
10 %
3
Fig.7. Typical collector-emitter saturation voltage.
Fig.8. Typical base-emitter saturation voltage.
Fig.6. Typical DC current gain. h
0.01
1000
0.9
0.8
0.7
0.6
0.5
0.4
100
0.1
10
1
10
1
0.001
1
0.01
0
VBESAT / V
VCESAT / V
0.1 A
hFE
IC=0.05 A
V
V
CE
BE
0.04
sat = f(I
sat = f(I
0.2 A
Tj = 25 C
Tj = 125 C
parameter V
0.01
1V
0.08
B
B
); parameter I
); parameter I
IB / A
IB / A
IC / A
0.1
IC=
50 mA
100 mA
200 mA
0.12
Tj = 25 C
Tj = 125 C
CE
0.1
Tj = 25 C
Tj = 125 C
Product specification
0.16
BUW14
C
C
FE
BUW14
BUW14
= f(I
5V
BUW14
0.2
1.0
Rev 1.000
1
C
)