BUW14 NXP Semiconductors, BUW14 Datasheet

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BUW14

Manufacturer Part Number
BUW14
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
PINNING - SOT82
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
March 1992
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
t
SYMBOL
V
V
I
I
I
I
-I
P
T
T
SYMBOL
R
R
C
CM
f
C
CM
B
BM
PIN
BM
stg
j
CESM
CEO
tot
CESM
CEO
tot
th j-mb
th j-a
1
2
3
emitter
collector
base
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
1
CONDITIONS
V
T
CONDITIONS
V
T
CONDITIONS
-
in free air
2
BE
mb
BE
mb
1
3
= 0 V
= 0 V
60 ˚C
60 ˚C
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
100
0.4
-65
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
1000
e
1000
c
450
450
150
150
0.5
0.5
0.2
0.3
0.3
4.5
20
20
1
1
-
-
BUW14
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
W
W
˚C
˚C
V
V
A
A
V
V
A
A
A
A
A
s

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BUW14 Summary of contents

Page 1

... R Junction to ambient th j-a 1 Turn-off current. March 1992 CONDITIONS ˚C mb PIN CONFIGURATION CONDITIONS ˚C mb CONDITIONS - in free air 1 Product specification BUW14 TYP. MAX. UNIT - 1000 V - 450 SYMBOL MIN. MAX. UNIT - 1000 ...

Page 2

... MHz 0 mA; Con Bon - mA 250 V Boff ˚ 50v 100-200R 250 Horizontal 200 Oscilloscope Vertical 100 Fig.2. Oscilloscope display for V CEOsust 2 Product specification BUW14 MIN. TYP. MAX. UNIT - - 100 1 1.0 mA 450 - - 0 1 1.0 V ...

Page 3

... 125 C 1 0.01 0 f(I FE parameter V CE VCESAT / V BUW14 125 C 0 0.1 A 0.1 IC=0.05 A 0.001 0.01 0 sat = f(I ); parameter VBESAT / V BUW14 125 C IC 100 mA 200 mA 0 0.04 0.08 0.12 0. sat = f(I ); parameter BUW14 1.0 0.2 Rev 1.000 ...

Page 4

... II Permissible extension for repetitive pulse operation. III Area of permissible operation during turn-on in single transistor converters, provided R 100 and tp 0 Repetitive pulse operation in this region is permissible provided V BE March 1992 0 and tp 2 ms. Fig.10. Transient thermal impedance f(t); parameter = duty cycle. th j-mb 4 Product specification BUW14 Rev 1.000 ...

Page 5

... Net Mass: 0.8 g mounting base 4.58 1) Lead dimensions within this zone uncontrolled. Fig.11. SOT82; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT82 envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 1992 2.8 2.3 1) 2.54 max 1.2 0.5 5 Product specification BUW14 7.8 max 3.75 3.1 11.1 2.5 max 15.3 min 2.29 0.88 max Rev 1.000 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1992 6 Product specification BUW14 Rev 1.000 ...

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