BUW14 NXP Semiconductors, BUW14 Datasheet - Page 2

• Manufacturer Part Number: BUW14
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Measured with half sine-wave voltage (curve tracer).
March 1992
Silicon Diffused Power Transistor
mb
SYMBOL
I
I
I
V
V
V
V
h
h
mb
SYMBOL
f
t
t
t
t
CES
CES
EBO
T
on
s
f
f
FE
FE
CEOsust
CEsat
CEsat
BEsat
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
30-60 Hz
Fig.1. Test circuit for V
PARAMETER
Collector cut-off current
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltages
Base-emitter saturation voltage
DC current gain
PARAMETER
Transition frequency
Switching times (resistive load circuit) I
Turn-on time
Turn-off storage time
Turn-off fall time
Turn-off fall time
6V
300R
CEOsust
2
Oscilloscope
1R
100-200R
Horizontal
Vertical
.
+ 50v
CONDITIONS
V
V
T
V
I
L = 25 mH
I
I
I
I
I
CONDITIONS
I
-I
T
B
C
C
C
C
C
C
Con
j
Boff
mb
BE
BE
EB
= 0 A; I
= 125 ˚C
= 0.1 A; I
= 0.2 A; I
= 0.2 A; I
= 50 mA; V
= 300 mA; V
= 0.2 A; V
= 0.2 A; I
= 0 V; V
= 0 V; V
= 5 V; I
= 95 ˚C
= 40 mA; V
2
C
= 100 mA;
C
B
B
B
250
200
100
IC / mA
CE
CE
CE
= 0 A
= 10 mA
= 20 mA
= 20 mA
Bon
0
CE
= V
= V
CE
= 10 V; f = 1 MHz
CC
Fig.2. Oscilloscope display for V
= 5 V
= 20 mA;
= 5 V
CESMmax
CESMmax
= 250 V
;
MIN.
450
VCE / V
25
-
-
-
-
-
-
-
TYP.
TYP.
0.4
3.5
0.4
50
50
20
-
-
-
-
-
-
Product specification
VCEOsust
MAX.
MAX.
100
100
min
1.0
1.0
0.8
1.0
1.0
0.7
5.0
1.3
CEOsust
-
-
-
-
BUW14
Rev 1.000
.
UNIT
UNIT
MHz
mA
mA
V
V
V
V
A
s
s
s
s