SLD-3091FZ ETC-unknow, SLD-3091FZ Datasheet - Page 2

• Manufacturer Part Number: SLD-3091FZ
• Description: The Sld2083cz Is A 10 Watt High Performance
• Manufacturer: ETC-unknow

303 S. Technology Court
Broomfield, CO 80021
Quality Specifications
Pin Description
Pin Diagram
Absolute Maximum Ratings
Drain Voltage (V
Gate Voltage (V
RF Input Power
Load Impedance for Continuous Operation
Without Damage
Output Device Channel Temperature
Lead Temperature During Solder Reflow
Operating Temperature Range
Storage Temperature Range
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation see
typical setup values specified in the table on page one.
Flange
Pin #
Pin 1
1
2
ESD Rating
Parameter
Case Flange = Ground
Source, Gnd
MTTF
R
Function
TH
ESD
Protection
Drain
Gate
GS
DS
Parameters
)
)
Transistor RF input and gate bias voltage. The gate bias voltage must be temperature compensated to
maintain constant bias current over the operating temperature range. Care must be taken to protect against
video transients that exceed the recommended maximum input power or voltage.
Transistor RF output and drain bias voltage. Typical voltage is 28V.
Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of
the board for optimum thermal and RF performance. See mounting instructions for recommendation.
Human Body Model
85
Thermal Resistance (Junction-to-Case)
o
C Leadframe, 200
Pin 2
-40 to +100
-20 to +90
Phone: (800) SMI-MMIC
Value
+200
+270
10:1
+36
35
20
o
C Channel
2
VSWR
dBm
Unit
ºC
ºC
ºC
ºC
V
V
Description
Note 1:
Gate voltage must be applied to V
concurrently or after application of drain voltage to
prevent potentially destructive oscillations. Bias voltages
should never be applied to the transistor unless it is
properly terminated on both input and output.
Note 2:
The required V
vary from device to device due to the normal die-to-die
variation in threshold voltage withLDMOS transistors.
Note 3:
The threshold voltage (V
varies with device temperature. External temperature
compensation may be required. See Sirenza application
notes AN-067 LDMOS Bias Temperature
Compensation.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
GS
Hours
ºC/W
Volts
Unit
corresponding to a specific I
GSTH
Min
EDS-104668 Rev B
http://www.sirenza.com
) of LDMOS transistors
GS
1.2 X 10
Typical
leads
500
1.5
SLD-3091FZ
6
Advance
DQ
will
Max