BLS3135-50 NXP Semiconductors, BLS3135-50 Datasheet - Page 3

• Manufacturer Part Number: BLS3135-50
• Description: Bls3135-50 Microwave Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions. Measured with IR-scan with 20 m
CHARACTERISTICS
T
APPLICATION INFORMATION
RF performance at T
2003 Apr 15
V
V
V
I
P
T
T
T
Z
V
V
I
I
I
h
Class-C; t
CM
j
CBO
CES
EBO
SYMBOL
SYMBOL
SYMBOL
FE
stg
j
sld
th j-h
CBO
CES
EBO
tot
(BR)CBO
(BR)CES
= 25 C unless otherwise specified.
Microwave power transistor
MODE OF OPERATION
spot size at hotspot.
p
= 100 s;
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
operating junction temperature
soldering temperature
thermal impedance from junction to heatsink
collector-base breakdown voltage
collector-emitter breakdown voltage I
collector leakage current
collector leakage current
emitter leakage current
DC current gain
h
= 25 C in a common-base test circuit.
= 10%
PARAMETER
PARAMETER
PARAMETER
3.1 to 3.5
(GHz)
f
open emitter
R
open collector
t
t
up to 0.2 mm from ceramic cap;
t
I
V
V
V
V
p
p
C
C
CB
CE
EB
CB
BE
= 100 s;
= 15 mA; open emitter
= 15 mA; V
10 s
100 s;
= 40 V; I
= 40 V; V
= 1.5 V; I
= 5 V; I
= 0
V
(V)
40
CE
3
C
CONDITIONS
CONDITIONS
E
C
= 1.5 A
BE
BE
= 10%; T
= 0
= 0
10%
= 0
= 0
t
t
p
p
= 100 s; = 10%; note 1
= 300 s; = 10%; note 1
typ. 55
(W)
P
mb
50
L
CONDITIONS
= 25 C
typ. 8
(dB)
G
75
75
40
7
65
p
MIN.
MIN.
BLS3135-50
Product specification
75
75
2
6
80
+200
200
235
1.5
3
0.3
VALUE
MAX.
MAX.
0.71
0.99
typ. 40
(%)
35
C
V
V
V
A
W
V
V
mA
mA
mA
C
C
C
UNIT
UNIT
UNIT
K/W
K/W