TK55D10J1 TOSHIBA Semiconductor CORPORATION, TK55D10J1 Datasheet - Page 5

• Manufacturer Part Number: TK55D10J1
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra-high-speed U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
0.01
100
0.1
10
1
1
※ Single pulse Ta=25℃
Curves must be derated
linearly with increase in
temperature.
I D max
(CONTINUOUS)
I D max (PULSED) *
DRAIN-SOURCE VOLTAGE V
DC OPERATION
Tc = 25°C
SAFE OPERATING AREA
0.01
0.1
10
1
10μ
10
0.02
0.05
0.2
0.1
Duty=0.5
100 μs *
100μ
0.01
100
1 ms *
V DSS max
DS
SINGLE PULSE
(V)
1m
PULSE WIDTH t
1000
r
th
/R
th (ch-c)
10m
5
R G = 1Ω
V
– t
DD
w
w
= 25 V, L = 200μH
500
400
300
200
100
(s)
0
25
100m
20 V
0 V
TEST CIRCUIT
CHANNEL TEMPERATURE (INITIAL)
P DM
50
Duty = t/T
R th (ch-c) =      0 .89°C/W
t
1
T
75
E
T
AS
ch
Ε AS
– T
V
(°C)
DD
=
ch
100
WAVE FORM
B
10
1
2
VDSS
I
⋅
AR
L
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
TK55D10J1
B VDSS
V
2008-01-22
DS
B VDSS
150
−
V DD
⎞
⎟
⎟
⎠