TK55D10J1 TOSHIBA Semiconductor CORPORATION, TK55D10J1 Datasheet - Page 4

• Manufacturer Part Number: TK55D10J1
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra-high-speed U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
200
150
100
20
16
12
1000
50
8
4
100
0
−80
0
10
0
1
0.1
COMMON SOURCE
PULSE TEST
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
V GS = 0 V
f = 1 MHz
Tc = 25°C
CASE TEMPERATURE Tc (°C)
CASE TEMPERATURE Tc (°C)
−40
V GS = 4.5V
40
CAPACITANCE – V
0
R
1
80
DS (ON)
13
P
D
27
I D = 55A
40
– Tc
– Tc
120
80
I D = 55A
10
DS
V GS = 10V
DS
160
120
13
C rss
(V)
C oss
C iss
27
160
200
100
4
1000
100
10
100
1
5
4
3
2
1
0
80
60
40
−80
20
0
0
0
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
COMMON SOURCE
V DS = 10 V
I D = 1 mA
PULSE TEST
DRAIN-SOURCE VOLTAGE V
TOTAL GATE CHARGE Q
CASE TEMPERATURE Tc (°C)
5
−40
V DS
0.4
DYNAMIC INPUT / OUTPUT
30
1
3
CHARACTERISTICS
0
V GS = 0V
0.8
I
60
DR
V
th
– V
40
– Tc
V DD = 20 V
V GS
DS
1.2
90
COMMON SOURCE
I D = 55 A
Tc = 25°C
PULSE TEST
80
g
DS
1.6
80V
120
(nC)
TK55D10J1
120
(V)
2008-01-22
40V
150
160
2
16
20
12
8
4
0