TK55D10J1 TOSHIBA Semiconductor CORPORATION, TK55D10J1 Datasheet

TK55D10J1

Manufacturer Part Number

TK55D10J1

Description

Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra-high-speed U-mos?

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TK55D10J1.pdf (6 pages)

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Switching Regulator Applications

•

Absolute Maximum Ratings

Thermal Characteristics

High-Speed switching

Low gate charge: Q

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel and lead temperatures do not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Characteristics

= 25 V, T

Characteristics

Pulse

= 110 nC (typ.)

= 20 kΩ)

DSS

= 1.1 to 2.3 V (V

= 25°C, L = 200 μH, I

(Note 1)

(Note 2)

= 10 μA (max) (V

DS (ON)

(Ta = 25°C)

TK55D10J1

Symbol

DGR

GSS

DSS

| = 110S

stg

= 8.4 mΩ (typ.)

Symbol

= 10 V, I

th (ch-c)

th (ch-a)

= 100 V)

= 55 A , R

−55 to 50

Rating

100

±20

210

140

382

150

9.4

= 1 mA)

0.89

83.3

Max

= 1Ω

°C/W

Unit

°C

Weight: 1.35 g (typ.)

JEDEC

JEITA

TOSHIBA

1.1±0.15

Ф0.2 M A

0.62±0.15

2.54

Internal Connection

1: Gate

2: Drain (Heat Sink)

3: Source

10.0±0.3

9.5±0.2

2.54

Ф3.65±0.2

TK55D10J1

2-10V1A

2008-01-22

0.75±0.25

0.57

+0.25

-0.10

0.6±0.1

Unit: mm

2.53±0.2

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TK55D10J1 Summary of contents

Page 1

... E 9 150 °C ch − °C stg Symbol Max Unit R 0.89 °C/W th (ch-c) R 83.3 °C/W th (ch- 1Ω TK55D10J1 Unit: mm 10.0±0.3 A 9.5±0.2 0.6±0.1 Ф3.65±0.2 1.1±0.15 0.75±0.25 0.62±0.15 Ф0 +0.25 2.54 2.54 0.57 -0.10 2.53±0 Gate 2: Drain (Heat Sink) 3: Source JEDEC - JEITA - TOSHIBA 2-10V1A Weight: 1 ...

Page 2

... Symbol Test Condition ⎯ ⎯ I DRP = DSF / A/μ TK55D10J1 Min Typ. Max ⎯ ⎯ ±10 ⎯ ⎯ 10 ⎯ ⎯ 100 ⎯ ⎯ 55 ⎯ 1.1 2.3 ⎯ 9.0 12.0 ⎯ 8.4 10.5 ⎯ 55 110 ⎯ ...

Page 3

... DRAIN-SOURCE VOLTAGE V 2 1.6 1.2 0 (V) GATE-SOURCE VOLTAGE V 100 COMMON SOURCE Tc = 25°C PULSE TEST 10 1 1000 1 DRAIN CURRENT I 3 TK55D10J1 I – COMMON SOURCE Tc = 25°C PULSE TEST 4 3 – COMMON SOURCE Tc = 25°C ...

Page 4

... PULSE TEST 0 −80 −40 100 (V) CASE TEMPERATURE Tc (°C) DYNAMIC INPUT / OUTPUT 100 200 0 30 TOTAL GATE CHARGE Q 4 TK55D10J1 I – 0.8 1.2 1.6 ( – 120 160 CHARACTERISTICS 20 COMMON SOURCE 25° ...

Page 5

... PULSE WIDTH t (s) w 500 400 300 200 100 CHANNEL TEMPERATURE (INITIAL) 1000 TEST CIRCUIT 1Ω 200μ TK55D10J1 – 100 125 150 T (° VDSS WAVE FORM ⎛ ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 TK55D10J1 20070701-EN 2008-01-22 ...

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