TK55D10J1 TOSHIBA Semiconductor CORPORATION, TK55D10J1 Datasheet - Page 3

• Manufacturer Part Number: TK55D10J1
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra-high-speed U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
200
160
120
100
80
40
40
30
20
10
10
50
0
1
0
0.1
0
0
COMMON SOURCE
V DS = 10V
PULSE TEST
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
V DS = 10 V
PULSE TEST
GATE-SOURCE VOLTAGE V
0.2
DRAIN CURRENT I
1
1
Tc = −55°C
8
10
0.4
2
⎪Y
I
I
D
6
D
fs
– V
– V
100
10
⎪ – I
4
DS
GS
0.6
D
3
100
25
COMMON SOURCE
Tc = 25°C
PULSE TEST
D
3.5
100
Tc = −55°C
GS
(A)
DS
0.8
4
V GS = 3V
25
(V)
(V)
3.2
3.4
1000
1.0
5
3
120
160
200
100
1.2
1.6
0.8
0.4
40
80
10
0
0
2
1
0
0
1
DRAIN-SOURCE VOLTAGE V
COMMON SOURCE
Tc = 25°C
PULSE TEST
GATE-SOURCE VOLTAGE V
10
8
2
4
DRAIN CURRENT I
6
10
V GS = 10V
R
V
DS (ON)
4
8
I
DS
D
4.5
– V
– V
DS
GS
– I
12
6
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
D
100
D
I D = 55A
27
13
GS
(A)
DS
16
8
TK55D10J1
V GS = 3V
2008-01-22
(V)
(V)
3.7
3.5
4
1000
10
20