PHB64N03LT NXP Semiconductors, PHB64N03LT Datasheet - Page 5

• Manufacturer Part Number: PHB64N03LT
• Description: Phb64n03lt Trenchmos Tm Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 10026
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
Characteristics
Conditions
I
I
V
V
V
V
V
I
V
V
I
D
D
D
S
S
DS
GS
GS
GS
DS
GS
DD
Rev. 01 — 27 August 2002
T
T
T
T
T
T
T
T
T
T
= 25 A; V
= 55 A; V
= 0.25 mA; V
= 1 mA; V
= 55 A; V
j
j
j
j
j
j
j
j
j
j
= 25 V; V
= 5 V; V
= 5 V; I
= 10 V; I
= 25 V; I
= 0 V; V
= 15 V; I
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 25 C
= 175 C
= 25 C
D
GS
GS
DD
DS
DS
D
D
D
= 25 A;
GS
DS
= 25 A
= 25 A
= 55 A; V
= 0 V;
= 0 V
= 15 V; V
= V
= 25 V; f = 1 MHz;
GS
= 0 V
= 0 V
= 0 V
GS
;
Figure 12
Figure 7
Figure 9
GS
GS
= 5 V;
= 10 V; R
and
Figure 13
Figure 11
8
G
= 5
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
PHB64N03LT
Min
25
22
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
0.05
-
10
15
25.5
10.4
32
20
8
7
950
340
230
8
45
45
40
0.95
1.2
Max
-
-
2
-
2.3
10
500
100
18
30.6
12
-
-
-
-
-
-
-
15
80
80
60
1.2
-
5 of 12
Unit
V
V
V
V
V
nA
m
m
m
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
A