PHB64N03LT NXP Semiconductors, PHB64N03LT Datasheet - Page 3

• Manufacturer Part Number: PHB64N03LT
• Description: Phb64n03lt Trenchmos Tm Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 10026
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P der
T
(%)
P
120
(A)
mb
I D
der
80
40
10 3
10 2
10
0
1
function of mounting base temperature.
= 25 C; I
0
=
1
----------------------
P
tot 25 C
P
tot
DM
50
Limit R DSon = V DS / I D
is single pulse.
100%
100
150
T mb ( C)
03aa16
DC
200
Rev. 01 — 27 August 2002
10
Fig 2. Normalized continuous drain current as a
I der
I
(%)
der
120
80
40
0
function of mounting base temperature.
=
0
------------------ -
I
D 25 C
I
D
50
t p = 10 s
100 s
1 ms
10 ms
100 ms
100%
V DS (V)
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
100
PHB64N03LT
150
T mb ( C)
03aj20
03aa24
200
10 2
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