PHB64N03LT NXP Semiconductors, PHB64N03LT Datasheet - Page 2

• Manufacturer Part Number: PHB64N03LT
• Description: Phb64n03lt Trenchmos Tm Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 10026
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
I
V
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
D
DM
S
SM
DS(AL)S
DS
tot
j
DS
DGR
GS
tot
stg
j
DS(AL)S
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
drain current (DC)
gate-source voltage
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
non-repetitive drain-source
avalanche energy
non-repetitive drain-source
avalanche current
Quick reference data
Limiting values
Conditions
25
T
T
V
V
Conditions
25
25
T
T
T
T
unclamped inductive load; I
t
V
unclamped inductive load; V
R
AL
mb
mb
mb
mb
mb
mb
mb
mb
GS
GS
GS
GS
Rev. 01 — 27 August 2002
= 0.1 ms; V
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; I
= 5V; starting T
= 50 ; V
T
T
T
= 5 V; I
j
j
j
175 C
175 C
175 C; R
D
D
Figure 1
= 25 A; T
GS
GS
= 25 A; T
GS
DD
GS
= 5 V; starting T
= 10 V
= 10 V;
= 15 V; R
GS
= 10 V;
j
= 25 C
p
p
= 20 k
j
j
= 25 C
= 25 C
10 s;
10 s
Figure 2
Figure 2
GS
D
DD
= 55 A;
= 50 ;
= 15 V;
Figure 3
j
= 25 C
and
3
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
PHB64N03LT
Typ
-
-
-
-
10.4
15
Min
-
-
-
-
-
-
-
-
-
-
-
55
55
Max
25
64
85
175
12
18
Max
25
25
64
52
240
85
+175
+175
64
240
60
64
20
2 of 12
Unit
V
A
W
m
m
Unit
V
V
A
A
V
A
W
A
A
mJ
A
C
C
C