HN29V51211 Renesas Electronics Corporation., HN29V51211 Datasheet - Page 25

• Manufacturer Part Number: HN29V51211
• Description: 512m And Type Flash Memory More Than 32,113-sector 542,581,248-bit - Hitachi Semiconductor
• Manufacturer: Renesas Electronics Corporation.

Serial Read (1) (2) Timing Waveform
Serial Read (1) with CA before SC Timing Waveform
I/O0 to I/O7
Notes: 1. The status returns to the standby at the rising edge of CE.
I/O0 to I/O7
Notes: 1. The status returns to the Standby at the rising edge of CE.
/Busy
/Busy
CDE
RES
RDY
CDE
RES
RDY
WE
WE
CE
OE
SC
OE
CE
SC
2. Output data is not valid after the number of the SC pulse exceeds 2112 and 64 in the serial read mode (1)and (2), respectively.
3. After any commands are written, the status can return to the standby after the command FFH is input and CE turns to the V
t
2. Output data is not valid after the number of the SC pulse exceeds (2112-n). (i
3. Output data is not valid after the number of the SC pulse exceeds (2112-m). (j
4. After any commands are written, the status can return to the standby after the command FFH is input and CE turns
5. This interval can be repeated (h-1) cycle. (1 h
SCS
t
RP
t
t
OEWS
t
SCS
CDS
to the V
t
RP
t
OEWS
t
t
CDS
CES
t
WP
t
DS
00H
t
CWC
t
CDH
t
t
WPH
DH
t
CDS
t
DS
IH
t
CES
t
WP
t
WP
t
t
AS
00H
/F0H
level.
CWC
SA(1)
t
CWC
t
CDS
t
t
t
AH
WPH
CDH
t
WPH
t
DH
t
t
WP
t
AS
DB
SA(2)
t
t
AS
CWC
t
AH
t
t
WP
WPH
SA(1)
t
CWC
t
SCD
t
t
t
t
WPH
WP
AH
AS
t
CA(1)
CWC
t
WPH
t
t
AH
RBSY
t
WSD
t
AS
t
t
WP
t
AS
WP
t
SA(2)
DB
CA(2)
t
OER
t
AH
t
t
AH
OEL
t
OER
t
WSD
t
t
t
SP
SAC
t
OES
RS
t
RBSY
t
SCC
D(n)out
t
t
SPL
t
OEL
SH
t
OES
t
High-Z
SAC
t
SCC
D(n+1)out
t
t
t
D0out/D2048out
SH
RS
SP
*
2
t
SAC
t
t
SCC
SAC
2048 + 64)
t
SPL
t
SH
t
SAC
t
SOH
D(n+i)out
t
DF
t
t
D1out/D2049out
OEWS
SW
t
SCC
t
*
SAC
High-Z
2
t
t
SH
t
WP
AS
CA(1)'
t
CWC
t
AH
t
WPH
*
2
h-1 cycle
t
SAC
t
t
t
AH
WP
AS
CA(2)'
t
OER
*
t
5
t
SAC
OEL
t
2111-n, 0
OES
2111-m, 0
D2111out/D2111out
t
SP
t
SAC
D(m)out
t
SCC
t
SOH
t
SPL
t
SH
t
COH
t
SAC
t
SCC
D(m+1)out
t
HN29V51211 Series
SH
t
*
n
DF
3
m
t
SAC
2111)
t
CPH
*
2111)
1
t
t
t
SAC
*
COH
SOH
2
D(m+j)out
*
1
t
DF
*
t
3
CPH
t
CDS
t
WP
t
DS
FFH
t
CDS
t
t
WP
DS
FFH
t
CDH
t
IH
DH
t
t
CDH
DH
t
*
level.
CEH
t
3
CEH
*
25
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