HN29V51211 Renesas Electronics Corporation., HN29V51211 Datasheet - Page 18

• Manufacturer Part Number: HN29V51211
• Description: 512m And Type Flash Memory More Than 32,113-sector 542,581,248-bit - Hitachi Semiconductor
• Manufacturer: Renesas Electronics Corporation.

HN29V51211 Series
Absolute Maximum Ratings
Parameter
V
V
All input and output voltages
Operating temperature range
Storage temperature range
Storage temperature under bias
Notes: 1. Relative to V
Capacitance (Ta = 25˚C, f = 1 MHz)
Parameter
Input capacitance
Output capacitance
18
CC
SS
voltage
voltage
2. Vin, Vout = –2.0 V for pulse width 20 ns.
3. Device storage temperature range before programming.
SS
.
Symbol
Cin
Cout
Symbol
V
V
Vin, Vout
Topr
Tstg
Tbias
CC
SS
Min
—
—
Typ
—
—
Value
–0.6 to +4.6
0
–0.6 to +4.6
0 to +70
–65 to +125
–10 to +80
Max
6
12
Unit
pF
pF
Test conditions
Vin = 0 V
Vout = 0 V
Unit
V
V
V
˚C
˚C
˚C
Notes
1
1, 2
3