MMFT1N10E ON Semiconductor, MMFT1N10E Datasheet - Page 9

• Manufacturer Part Number: MMFT1N10E
• Description: Medium Power Field Effect Transistor
• Manufacturer: ON Semiconductor

200°C
150°C
100°C
50°C
PREHEAT
ZONE 1
STEP 1
TIME (3 TO 7 MINUTES TOTAL)
RAMP"
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
STEP 2
SOAK"
VENT
150°C
Figure 18. Typical Solder Heating Profile
100°C
ZONES 2 & 5
DESIRED CURVE FOR LOW
HEATING
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STEP 3
RAMP"
MASS ASSEMBLIES
160°C
9
ZONES 3 & 6
140°C
HEATING
STEP 4
SOAK"
SOLDER IS LIQUID FOR
MASS OF ASSEMBLY)
170°C
40 TO 80 SECONDS
ZONES 4 & 7
(DEPENDING ON
HEATING
STEP 5
SPIKE"
T
MAX
STEP 6
VENT
COOLING
PEAK AT
SOLDER
205° TO
STEP 7
219°C
JOINT