MMFT1N10E ON Semiconductor, MMFT1N10E Datasheet - Page 4

• Manufacturer Part Number: MMFT1N10E
• Description: Medium Power Field Effect Transistor
• Manufacturer: ON Semiconductor

FORWARD BIASED SAFE OPERATING AREA
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned
on. Because these curves include the limitations of
simultaneous high voltage and high current, up to the rating
of the device, they are especially useful to designers of
linear systems. The curves are based on an ambient
temperature of 25
of 150
ambient temperatures can be determined by using the
thermal response curves. Motorola Application Note,
AN569, “Transient Thermal Resistance−General Data and
Its Use” provides detailed instructions.
SWITCHING SAFE OPERATING AREA
that the load line may traverse without incurring damage to
the MOSFET. The fundamental limits are the peak current,
I
source−drain current versus re−applied drain voltage when the source−drain diode has undergone forward bias. The curve
shows the limitations of I
to those of Figure 9 are present. Full or half−bridge PWM DC motor controllers are common applications requiring CSOA
data.
Higher values of dI
package, and circuit impedances. Maximum device stress occurs during t
blocking.
source−drain diode current just prior to the onset of commutation.
attained with dI
DM
The FBSOA curves define the maximum drain−to−source
The switching safe operating area (SOA) is the boundary
The Commutating Safe Operating Area (CSOA) of Figure 10 defines the limits of safe operation for commutated
Device stresses increase with increasing rate of change of source current so dI
V
V
R
Stray inductances in Motorola’s test circuit are assumed to be practical minimums. dV
DS(pk)
R
GS
and the breakdown voltage, BV
is specified at 80% rated BV
0.001
°
should be minimized during commutation. T
0.01
C. Limitations for repetitive pulses at various
1.0
0.1
1.0E−05
is the peak drain−to−source voltage that the device must sustain during commutation; I
S
/dt of 400 A/μs.
°
S
C and a maximum junction temperature
/dt require an appropriate derating of I
FM
1.0E−04
and peak V
D = 0.5
0.05
0.01
0.02
0.2
0.1
DSS
DSS
COMMUTATING SAFE OPERATING AREA (CSOA)
DS
to ensure that the CSOA stress is maximized as I
. The switching SOA
for a given rate of change of source current. It is applicable when waveforms similar
1.0E−03
J
http://onsemi.com
Figure 8. Thermal Response
has only a second order effect on CSOA.
FM
SINGLE PULSE
, peak V
4
t, TIME (s)
1.0E−02
is applicable for both turn−on and turn−off of the devices for
switching times less than one microsecond.
0.001
0.01
DS
0.1
10
1
0.1
or both. Ultimately dI
Figure 7. Maximum Rated Forward Biased
rr
P
as the diode goes from conduction to reverse
(pk)
DUTY CYCLE, D = t
V
DS
t
1
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.0E−01
S
R
THERMAL LIMIT
PACKAGE LIMIT
/dt is specified with a maximum value.
t
2
DS(on)
Safe Operating Area
1
S
decays from I
LIMIT
DS
S
/dt is limited primarily by device,
/dt in excess of 10 V/ns was
1
/t
2
FM
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
1 s
J(pk)
θJA
θJA
is the maximum forward
(t) = r(t) R
= 156°C/W MAX
− T
1.0E+00
10
RM
500 ms
A
DC
= P
20 ms
to zero.
(pk)
θJA
V
SINGLE PULSE
T
1
A
R
GS
θJA
= 25°C
= 20 V
(t)
100 ms
100
1.0E+01