MMFT1N10E ON Semiconductor, MMFT1N10E Datasheet - Page 3

• Manufacturer Part Number: MMFT1N10E
• Description: Medium Power Field Effect Transistor
• Manufacturer: ON Semiconductor

0.5
0.4
0.3
0.2
0.1
10
8
6
4
2
0
4
3
2
1
0
0
0
0
4
9 V
10 V
Figure 1. On Region Characteristics
Figure 3. Transfer Characteristics
V
6
V
V
Figure 5. On−Resistance versus
DS
GS
GS
2
2
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Gate−to−Source Voltage
8 V
8
4
4
10
T
J
= −55°C
6
6
12
T
I
D
J
= 1 A
25°C
= 25°C
100°C
8
8
14
V
V
T
DS
GS
J
= 25°C
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= 10 V
= 4 V
7 V
5 V
6 V
10
16
10
3
1.2
1.1
1.0
0.9
0.8
0.7
0.5
0.4
0.3
0.2
0.1
0.5
0.4
0.3
0.2
0.1
0
0
−50
−50
0
Figure 4. On−Resistance versus Drain Current
V
GS
Figure 6. On−Resistance versus Junction
Figure 2. Gate−Threshold Voltage Variation
= 10 V
T
0
0
J
, JUNCTION TEMPERATURE (°C)
I
D
T
, DRAIN CURRENT (AMPS)
J
With Temperature
, JUNCTION TEMP (°C)
Temperature
T
J
50
= 100°C
50
2
−55 °C
25°C
100
100
V
I
V
I
D
D
GS
DS
= 1 A
= 1.0 mA
= V
= 10 V
GS
1
1