MMFT1N10E ON Semiconductor, MMFT1N10E Datasheet - Page 6

• Manufacturer Part Number: MMFT1N10E
• Description: Medium Power Field Effect Transistor
• Manufacturer: ON Semiconductor

V
1400
1200
1000
Figure 15. Gate Charge versus Gate−To−Source Voltage
in
800
600
400
200
10
0
8
6
4
2
0
100 k
20
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 14. Capacitance Variation With Voltage
15 V
V
in
15
C
= 15 V
C
47 k
rss
Figure 16. Gate Charge Test Circuit
iss
http://onsemi.com
V
2N3904
pk
10
GS
47 k
2
+18 V
; PULSE WIDTH ≤ 100 μs, DUTY CYCLE ≤ 10%.
Q
g
, TOTAL GATE CHARGE (nC)
2N3904
5
6
1 mA
4
0
C
V
oss
100
DS
10 V
= 50 V
5
FERRITE
C
100 k
BEAD
rss
10
6
V
DS
0.1 μF
C
T
f = 1 MHz
C
T
I
V
V
D
oss
J
J
iss
GS
DS
= 1 A
= 25°C
= 25°C
15
= 10 V
= 80 V
V
DD
DUT
SAME
DEVICE TYPE
AS DUT
20
8