BGB101 NXP Semiconductors, BGB101 Datasheet - Page 9

• Manufacturer Part Number: BGB101
• Description: 0 Dbm Bluetooth Radio Module
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
V
given are not tested.
2003 Aug 05
Supply
V
I
Frequency selection
f
V
R
C
ICFT
t
Transmitter performance
f
k
P
P
P
f
BW
VSWR
H
CC
S1
ref
PLL
RF
dev
MOD
f
f
f
S1
ref(min)
o
o min 111
o 1 MHz
0 dBm Bluetooth radio module
i
i
1, VCO
SYMBOL
ref
1 slot
3, 5 slots
+ I
, V
20dB
= 2.8 V;T
S2
S2
, V
+ I
S3
S3
amb
nominal supply voltage
total supply current
reference input frequency
reference frequency inaccuracy
sinusoidal input signal level
input resistance (real part of the
input impedance)
input capacitance (imaginary
part of the input impedance)
carrier drift
initial carrier frequency
tolerance
PLL settling time
RF frequency
VCO modulation gain
output power
minimum output power
adjacent channel output power
frequency deviation
1111000 bit pattern
20 dB bandwidth
voltage standing wave ratio
VCO frequency feedtrough
= 25 C; f
PARAMETER
dev
= 160 kHz; unless otherwise specified. Characteristics for which only a typical value is
RMS value
from T_GFSK (pad 3) to
bits b12,b11, b10 =1, 0, 1; note
bits b12,b11, b10 =1, 1, 1
referred to wanted output level;
during RX guard space
during RX (PLL off)
during TX guard space
during TX (PLL off)
power-down mode
at 13MHz
at 13MHz
over 1 TX slot; note 5
over 3, 5 TX slots (DM3, DH3,
DM5, DH5 packets); note 5
note 5
across entire band; note 5
over full temperature and supply
range
antenna (pad 21): note 2
5
at 1 MHz offset; measured in
100 kHz bandwidth; referred to
wanted channel; note 5
note 5 and note 6
note 5 and note 6
normalized to Z
f
f
RF
VCO
= 2450 MHz;
= 4900 MHz; note 1; note 5
9
CONDITIONS
o
= 50
2.65
250
2402
+1
140
MIN.
tbd
25
40
75
2
2.8
15
40
15
33
5
12,13
2
2.5
0
0
0
150
1
1
1.5
tbd
TYP.
Preliminary specification
3.4
48
40
30
tbd
500
25
40
75
200
2480
4
175
1
tbd
MAX.
20
BGB101
V
mA
mA
mA
mA
MHz
ppm
mV
k
pF
kHz
kHz
kHz
MHz
MHz/V
dBm
dBm
dBc
kHz
MHz
dBc
A
s
UNIT