FS10AS-3 Renesas Electronics Corporation., FS10AS-3 Datasheet - Page 4

• Manufacturer Part Number: FS10AS-3
• Description: High-speed Switching Use Nch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

FS10AS-3
Rev.2.00
Aug 07, 2006
10
10
10
10
20
16
12
20
16
12
8
4
0
7
5
3
2
7
5
3
2
7
5
3
2
8
4
0
4
3
2
1
0
3 5 7
0
Transfer Characteristics (Typical)
Tch = 25°C
f = 1MHz
V
Tch = 25°C
I
Drain-Source Voltage V
D
Gate-Source Voltage V
Drain-Source Voltage (Typical)
GS
= 10A
10
Gate-Source Voltage vs.
= 0V
10
Gate Charge Qg (nC)
4
Gate Charge (Typical)
0
2
Capacitance vs.
V
3 5 7
DS
page 4 of 6
20
8
= 50V
100V
80V
10
1
12
30
2
3 5 7
Tc = 25°C
V
Pulse Test
DS
Ciss
Coss
Crss
GS
DS
16
40
= 10V
10
(V)
2
(V)
2
20
50
3
10
10
10
10
10
10
20
16
12
8
4
0
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
3
2
1
10
3
2
1
10
0
Switching Characteristics (Typical)
0
0
Forward Transfer Admittance vs.
V
Pulse Test
t
t
Source-Drain Voltage V
Tc = 25°C
Tc = 125°C
f
r
GS
Source-Drain Diode Forward
2 3 4 5 7
2 3 4 5 7
125°C
0.4
Characteristics (Typical)
75°C
= 0V
Drain Current (Typical)
Drain Current I
Drain Current I
75°C
25°C
0.8
t
t
d(off)
d(on)
10
10
Tch = 25°C
V
V
R
DD
GS
GEN
1
1
1.2
= 80V
= 10V
= R
2 3 4 5 7
2 3 4 5 7
D
D
V
Pulse Test
GS
(A)
(A)
DS
1.6
SD
= 50Ω
= 10V
(V)
10
10
2.0
2
2