FS10AS-3 Renesas Electronics Corporation., FS10AS-3 Datasheet

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FS10AS-3

Manufacturer Part Number
FS10AS-3
Description
High-speed Switching Use Nch Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FS10AS-3-A1
Manufacturer:
MIT
Quantity:
6 900
Part Number:
FS10AS-3-A1
Manufacturer:
TSC
Quantity:
8 000
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
FS10AS-3
High-Speed Switching Use
Nch Power MOS FET
Features
Outline
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
Rev.2.00
Drive voltage : 10 V
V
r
I
Integrated Fast Recovery Diode (TYP.) : 100 ns
DS(ON) (max)
D
DSS
: 10 A
: 150 V
Parameter
Aug 07, 2006
: 170 m
RENESAS Package code: PRSS0004ZA-A
(Package name: MP-3A)
page 1 of 6
1
Symbol
2
V
V
Tstg
Tch
I
I
I
P
4
DSS
GSS
I
DM
I
SM
DA
3
D
S
D
– 55 to +150
– 55 to +150
Ratings
0.32
150
10
40
10
10
40
35
20
1
2, 4
3
Unit
W
V
V
A
A
A
A
A
g
C
C
(Previous: MEJ02G0111-0101)
1. Gate
2. Drain
3. Source
4. Drain
V
V
L = 100 H
Typical value
GS
DS
= 0 V
= 0 V
REJ03G1407-0200
Conditions
Aug 07, 2006
(Tc = 25°C)
Rev.2.00

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FS10AS-3 Summary of contents

Page 1

... FS10AS-3 High-Speed Switching Use Nch Power MOS FET Features Drive voltage : 150 V DSS r : 170 m DS(ON) (max Integrated Fast Recovery Diode (TYP.) : 100 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings ...

Page 2

... FS10AS-3 Electrical Characteristics Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time ...

Page 3

... FS10AS-3 Performance Curves Power Dissipation Derating Curve 100 Case Temperature Tc (°C) Output Characteristics (Typical 20V 10V 25°C Pulse Test 0.4 0.8 Drain-Source Voltage V On-State Voltage vs. Gate-Source Voltage (Typical) 2.0 1.6 1.2 0.8 0 25°C Pulse Test Gate-Source Voltage V Rev ...

Page 4

... FS10AS-3 Transfer Characteristics (Typical Gate-Source Voltage V Capacitance vs. Drain-Source Voltage (Typical Tch = 25° 1MHz Drain-Source Voltage V Gate-Source Voltage vs. Gate Charge (Typical) 20 Tch = 25° ...

Page 5

... FS10AS-3 On-State Resistance vs. Channel Temperature (Typical 10V Pulse Test –1 10 – Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) 1 1mA D 1.2 1.0 0.8 0.6 0.4 – Channel Temperature Tch (°C) Switching Time Measurement Circuit Vin Monitor D ...

Page 6

... Note: Please confirm the specification about the shipping in detail. Rev.2.00 Aug 07, 2006 page Previous Code MASS[Typ.]  0.32g 2.3 6.6 0.5 ± 0.2 5.3 ± 0.2 0.1 ± 0.1 0.76 0.5 ± 0.2 2.3 ± 0.2 Quantity Standard order code 3000 Type name – T +Direction ( Type name Unit: mm Standard order code example FS10AS-3-T13 FS10AS-3 ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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