FS10AS-06 Renesas Electronics Corporation., FS10AS-06 Datasheet

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FS10AS-06

Manufacturer Part Number
FS10AS-06
Description
High-speed Switching Use Nch Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FS10AS-06
Manufacturer:
MITSUBISHI
Quantity:
12 500
FS10AS-06
High-Speed Switching Use
Nch Power MOS FET
Features
Outline
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Rev.1.00, Aug.20.2004, page 1 of 6
Drive voltage : 10 V
V
r
I
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns
DS(ON) (max)
D
DSS
: 10 A
: 60 V
Parameter
: 78 m
MP-3A
Symbol
1
V
V
Tstg
Tch
I
I
I
P
DSS
GSS
I
DM
I
SM
2
DA
D
S
D
4
3
1
– 55 to +150
– 55 to +150
Ratings
0.32
60
10
40
10
10
40
30
20
2, 4
3
Unit
W
V
V
A
A
A
A
A
g
C
C
1. Gate
2. Drain
3. Source
4. Drain
V
V
L = 100 H
Typical value
GS
DS
= 0 V
= 0 V
REJ03G0240-0100
Conditions
Aug.20.2004
(Tc = 25°C)
Rev.1.00

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FS10AS-06 Summary of contents

Page 1

... FS10AS-06 High-Speed Switching Use Nch Power MOS FET Features Drive voltage : DSS DS(ON) (max Recovery Time of the Integrated Fast Recovery Diode (TYP Outline MP-3A Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage ...

Page 2

... FS10AS-06 Electrical Characteristics Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time ...

Page 3

... FS10AS-06 Performance Curves Drain Power Dissipation Derating Curve 100 Case Temperature Tc (°C) Output Characteristics (Typical 20V GS 10V 0.4 0.8 1.2 Drain-Source Voltage V On-State Voltage vs. Gate-Source Voltage (Typical) 2.0 1.6 1.2 0.8 0 Gate-Source Voltage V Rev.1.00, Aug.20.2004, page ...

Page 4

... FS10AS-06 Transfer Characteristics (Typical Gate-Source Voltage V Capacitance vs. Drain-Source Voltage (Typical Drain-Source Voltage V Gate-Source Voltage vs. Gate Charge (Typical) 20 Tch = 25° 10A ...

Page 5

... FS10AS-06 On-State Resistance vs. Channel Temperature (Typical 10V 1 Pulse Test –1 10 – Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) 1 1mA D 1.2 1.0 0.8 0.6 0.4 – Channel Temperature Tch (°C) Switching Time Measurement Circuit Vin Monitor D ...

Page 6

... Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page Lead Material 0.32 Cu alloy 2.3 0.5 ± 0.1 0.1 ± 0.1 0.5 ± 0.2 Quantity Standard order code 3000 Type name – T +Direction ( Type name Dimension in Millimeters Symbol Min Typ Max Standard order code example FS10AS-06-T13 FS10AS-06 ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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