FS10AS-3 Renesas Electronics Corporation., FS10AS-3 Datasheet - Page 2

• Manufacturer Part Number: FS10AS-3
• Description: High-speed Switching Use Nch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
FS10AS-3
Electrical Characteristics
Rev.2.00
Aug 07, 2006
Parameter
page 2 of 6
Symbol
V
V
R
V
r
Coss
| y
(BR)DSS
DS(ON)
Crss
Ciss
t
t
I
I
DS(ON)
V
th(ch-c)
GS(th)
d(on)
d(off)
GSS
DSS
t
t
t
SD
rr
fs
r
f
|
Min
150
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1250
0.61
Typ
122
175
100
3.0
1.0
12
75
25
30
60
34
—
—
—
—
Max
0.85
3.57
170
0.1
4.0
1.5
—
—
—
—
—
—
—
—
—
—
0.1
Unit
m
mA
C/W
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
I
V
V
I
I
I
I
V
f = 1MHz
V
V
R
I
Channel to case
I
D
D
D
D
D
S
S
GS
DS
DS
DD
GS
GEN
= 1 mA, V
= 1 mA, V
= 5 A, V
= 5 A, V
= 5 A, V
= 5 A, V
= 10 A, d
= 150 V, V
= 10 V, V
= 20 V, V
= 80 V, I
= 10 V,
= R
Test Conditions
GS
GS
GS
DS
GS
is
= 50
GS
DS
/d
D
= 10 V
= 10 V
= 10 V
= 0 V
GS
t
= 5 A,
(Tch = 25°C)
GS
DS
= 10 V
= 0 V
= –100 A/ s
= 0 V,
= 0 V
= 0 V