MT9VDDF3272G-40B Micron Semiconductor Products, MT9VDDF3272G-40B Datasheet - Page 23
MT9VDDF3272G-40B
Manufacturer Part Number
MT9VDDF3272G-40B
Description
256mb, 512mb X72, Ecc, Sr Pc3200 184-pin Ddr Rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT9VDDF3272G-40B.pdf
(39 pages)
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Table 14:
pdf: 09005aef80f6ab6a, source: 09005aef80f6ab23
DDAF9C32_64x72_2.fm - Rev. C 7/05 EN
AC Characteristics
Parameter
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
DDR SDRAM Component Electrical Characteristics and Recommended AC Operating
Conditions (Continued)
Notes: 1–5, 8, 10, 12; notes appear on pages 24–27; 0°C ≤ T
DD
256MB, 512MB: (x72, ECC, SR) PC3200 184-Pin DDR RDIMM
23
Symbol
t
t
WPRES
t
t
t
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
t
WPRE
t
WPST
t
t
XSNR
XSRD
RPRE
REFC
RPST
t
WTR
RRD
REFI
VTD
WR
na
A
≤ +70°C; V
Min
0.90
0.40
0.25
0.40
200
10
15
70
t
0
2
0
QH -
DD
-40B
= V
t
DQSQ
Electrical Specifications
DD
70.30
Max
1.10
0.60
7.81
0.6
Q = +2.6V ±0.1V
©2003 Micron Technology, Inc. All rights reserved.
Units
t
t
t
t
t
t
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
ns
ns
CK
CK
Notes
18, 19
38
38
17
22
21
21
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