MT9VDDF3272G-40B Micron Semiconductor Products, MT9VDDF3272G-40B Datasheet - Page 22

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MT9VDDF3272G-40B

Manufacturer Part Number
MT9VDDF3272G-40B
Description
256mb, 512mb X72, Ecc, Sr Pc3200 184-pin Ddr Rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
Table 13:
Table 14:
pdf: 09005aef80f6ab6a, source: 09005aef80f6ab23
DDAF9C32_64x72_2.fm - Rev. C 7/05 EN
Parameter
AC Characteristics
Parameter
Input/Output Capacitance: DQ, DQS, DM
Input Capacitance: Command and Address, S#, CKE
Input Capacitance: CK, CK#
Access window of DQs from CK/CK#
CK high-level width
CK low-level width
Clock cycle time
DQ and DM input hold time relative to DQS
DQ and DM input setup time relative to DQS
DQ and DM input pulse width (for each input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per group, per access
Write command to first DQS latching transition
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising - hold time
Half clock period
Data-out high-impedance window from CK/CK#
Data-out low-impedance window from CK/CK#
Address and control input hold time (fast slew rate)
Address and control input setup time (fast slew rate)
Address and control input hold time (slow slew rate)
Address and control input setup time (slow slew rate)
Address and Control input pulse width (for each input)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-valid, per access
Data hold skew factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge command
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
Capacitance
Note: 11; notes appear on pages 24–27
DDR SDRAM Component Electrical Characteristics and Recommended AC Operating
Conditions
Notes: 1–5, 8, 10, 12; notes appear on pages 24–27; 0°C ≤ T
256MB, 512MB: (x72, ECC, SR) PC3200 184-Pin DDR RDIMM
CL = 3
CL = 2.5
CL = 2
22
Symbol
t
t
t
t
t
t
DQSCK
CK (2.5)
t
t
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
CK (2)
DQSH
DQSQ
DIPW
t
t
t
CK (3)
DQSL
DQSS
t
t
t
t
MRD
t
t
t
t
t
DSH
t
t
t
t
QHS
RAP
RCD
t
IPW
RAS
t
t
t
DSS
t
t
t
RFC
QH
DH
AC
CH
HP
HZ
IH
IH
DS
RC
RP
CL
LZ
IS
IS
A
F
S
F
S
≤ +70°C; V
Symbol
t
CH,
C
C
C
-
-0.70
-0.70
-0.60
Min
0.45
0.45
0.40
0.40
1.75
0.35
0.35
0.72
0.20
0.20
0.60
0.60
0.60
0.60
2.20
t
t
I0
I1
I2
5.0
6.0
7.5
QHS
10
40
15
55
70
15
15
HP
t
DD
CL
-40B
= V
Electrical Specifications
DD
70,000
+0.70
+0.60
+0.70
Max
0.55
0.55
7.50
0.40
1.28
0.50
13
13
Q = +2.6V ±0.1V
©2003 Micron Technology, Inc. All rights reserved.
Min
2.5
4
Units
t
t
t
t
t
t
t
t
ns
CK
CK
ns
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
CK
CK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
Max
3.5
5
4
Notes
40, 46
40, 46
40, 46
23, 27
23, 27
22, 23
16, 37
16, 37
22, 23
Units
31,
26
26
27
30
12
12
12
12
44
pF
pF
pF

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