MT9VDDF3272G-40B Micron Semiconductor Products, MT9VDDF3272G-40B Datasheet - Page 14

• Manufacturer Part Number: MT9VDDF3272G-40B
• Description: 256mb, 512mb X72, Ecc, Sr Pc3200 184-pin Ddr Rdimm
• Manufacturer: Micron Semiconductor Products

Table 5:
Table 6:
pdf: 09005aef80f6ab6a, source: 09005aef80f6ab23
DDAF9C32_64x72_2.fm - Rev. C 7/05 EN
Burst Definition Table
CAS Latency (CL) Table
Notes: 1. For a burst length of two, A1–Ai select the two-data-element block; A0 selects the first
Burst Length
2. For a burst length of four, A2–Ai select the four-data-element block; A0–A1 select the first
3. For a burst length of eight, A3–Ai select the eight-data-element block; A0–A2 select the
4. Whenever a boundary of the block is reached within a given sequence above, the follow-
5. i = 9 for 256MB
access within the block.
access within the block.
first access within the block.
ing access wraps within the block.
i = 9, 11 for 512MB
Speed
2
4
8
-40B
256MB, 512MB: (x72, ECC, SR) PC3200 184-Pin DDR RDIMM
A2
Starting Column
0
0
0
0
1
1
1
1
Address
A1
A1
75 ≤ f ≤ 133
0
0
1
1
0
0
1
1
0
0
1
1
CL = 2
14
Allowable Operating Clock Frequency (MHz)
A0
A0
A0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Type = Sequential
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
Order of Accesses Within a Burst
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
75 ≤ f ≤ 167
0-1
1-0
CL = 2.5
Mode Register Definition
©2003 Micron Technology, Inc. All rights reserved.
Type = Interleaved
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
133 ≤ f ≤ 200
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
CL = 3
0-1
1-0